View MAX19994AETX_4701408.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

19-5197; Rev 0; 4/10
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz Downconversion Mixer with LO Buffer/Switch
General Description
The MAX19994A dual-channel downconverter is designed to provide 8.4dB of conversion gain, +25dBm input IP3, +14dBm 1dB input compression point, and a noise figure of 9.8dB for 1200MHz to 2000MHz diversity receiver applications. With an optimized LO frequency range of 1450MHz to 2050MHz, this mixer supports both high- and low-side LO injection architectures for the 1200MHz to 1700MHz and 1700MHz to 2000MHz RF bands, respectively. In addition to offering excellent linearity and noise performance, the device also yields a high level of component integration. This device includes two double-balanced passive mixer cores, two LO buffers, a dual-input LO selectable switch, and a pair of differential IF output amplifiers. Integrated on-chip baluns allow for singleended RF and LO inputs. The MAX19994A requires a nominal LO drive of 0dBm and a typical supply current of 330mA at VCC = 5.0V, or 264mA at VCC = 3.3V. The MAX19994A is pin compatible with the MAX9985/ MAX9995/MAX19985A/MAX19993/MAX19995/ MAX19995A series of 700MHz to 2500MHz mixers and pin similar with the MAX19997A/MAX19999 series of 1850MHz to 4000MHz mixers, making this entire family of downconverters ideal for applications where a common PCB layout is used across multiple frequency bands. The device is available in a 6mm x 6mm, 36-pin thin QFN package with an exposed pad. Electrical performance is guaranteed over the extended temperature range, from TC = -40NC to +85NC.
Features
S 1200MHz to 2000MHz RF Frequency Range S 1450MHz to 2050MHz LO Frequency Range S 50MHz to 500MHz IF Frequency Range S 8.4dB Typical Conversion Gain S 9.8dB Typical Noise Figure S +25dBm Typical Input IP3 S +14dBm Typical Input 1dB Compression Point S 68dBc Typical 2LO - 2RF Spurious Rejection at
MAX19994A
PRF = -10dBm
S Dual Channels Ideal for Diversity Receiver
Applications
S 47dB Typical Channel-to-Channel Isolation S Low -6dBm to +3dBm LO Drive S Integrated LO Buffer S Internal RF and LO Baluns for Single-Ended
Inputs
S Built-In SPDT LO Switch with 48dB LO-to-LO
Isolation and 50ns Switching Time
S Pin Compatible with the MAX9985/MAX9995/
MAX19985A/MAX19993/MAX19995/MAX19995A Series of 700MHz to 2200MHz Mixers
S Pin Similar to the MAX19997A/MAX19999 Series
of 1850MHz to 4000MHz Mixers
S Single 5.0V or 3.3V Supply S External Current-Setting Resistors Provide Option
Applications
WCDMA/LTE Base Stations TD-SCDMA Base Stations GSM/EDGE Base Stations cdma2000M Base Stations Wireless Local Loop Fixed Broadband Wireless Access Private Mobile Radios Military Systems
for Operating Device in Reduced-Power/ReducedPerformance Mode
Ordering Information
PART MAX19994AETX+ MAX19994AETX+T TEMP RANGE -40NC to +85NC -40NC to +85NC PIN-PACKAGE 36 Thin QFN-EP* 36 Thin QFN-EP*
+Denotes a lead(Pb)-free/RoHS-compliant package. *EP = Exposed pad. T = Tape and reel.
cdma2000 is a registered trademark of Telecommunications Industry Association.
_______________________________________________________________ Maxim Integrated Products 1
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxim's website at www.maxim-ic.com.
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz Downconversion Mixer with LO Buffer/Switch
MAX19994A
ABSOLUTE MAXIMUM RATINGS
VCC to GND..........................................................-0.3V to +5.5V LO1, LO2 to GND .................................................-0.3V to +0.3V LOSEL to GND .........................................-0.3V to (VCC + 0.3V) RFMAIN, RFDIV, and LO_ Input Power ........................ +15dBm RFMAIN, RFDIV Current (RF is DC shorted to GND through a balun) ...................50mA Continuous Power Dissipation (Note 1) ..............................8.7W BJA (Notes 1, 3) ............................................................ +38NC/W BJC (Notes 2, 3) ..............................................................7.4NC/W Operating Case Temperature Range (Note 4)................................................. -40NC to +85NC Junction Temperature .....................................................+150NC Storage Temperature Range............................ -65NC to +150NC Lead Temperature (soldering, 10s) ................................+300NC Soldering Temperature (reflow) ......................................+260NC
Note 1: Junction temperature TJ = TA + (BJA x VCC x ICC). This formula can be used when the ambient temperature of the PCB is known. The junction temperature must not exceed +150NC. Note 2: Based on junction temperature TJ = TC + (BJC x VCC x ICC). This formula can be used when the temperature of the exposed pad is known while the device is soldered down to a PCB. See the Applications Information section for details. The junction temperature must not exceed +150NC. Note 3: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a fourlayer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial. Note 4: TC is the temperature on the exposed pad of the package. TA is the ambient temperature of the device and PCB.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, VCC = 4.75V to 5.25V, no input AC signals. TC = -40NC to +85NC, R1 = R4 = 681I, R2 = R5 = 1.82kI. Typical values are at VCC = 5.0V, TC = +25NC, unless otherwise noted. All parameters are production tested.) PARAMETER Supply Voltage Supply Current LOSEL Input High Voltage LOSEL Input Low Voltage LOSEL Input Current SYMBOL VCC ICC VIH VIL IIH and IIL -10 Total supply current 2 0.8 +10 CONDITIONS MIN 4.75 TYP 5 330 MAX 5.25 420 UNITS V mA V V FA
3.3V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, VCC = 3.0V to 3.6V, no input AC signals. TC = -40NC to +85NC, R1 = R4 = 681I, R2 = R5 = 1.43kI. Typical values are at VCC = 3.3V, TC = +25NC, unless otherwise noted.) PARAMETER Supply Voltage Supply Current LOSEL Input High Voltage LOSEL Input Low Voltage SYMBOL VCC ICC VIH VIL Total supply current CONDITIONS MIN 3.0 TYP 3.3 264 2 0.8 MAX 3.6 UNITS V mA V V
RECOMMENDED AC OPERATING CONDITIONS
PARAMETER RF Frequency LO Frequency SYMBOL fRF fLO CONDITIONS C1 = C8 = 39pF (Note 5) C1 = C8 = 1.8pF, L7 = L8 = 4.7nH (Note 5) (Note 5) MIN 1200 1700 1450 TYP MAX 1700 2000 2050 UNITS MHz MHz
2
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz Downconversion Mixer with LO Buffer/Switch
RECOMMENDED AC OPERATING CONDITIONS (continued)
PARAMETER SYMBOL CONDITIONS Using Mini-Circuits TC4-1W-17 4:1 transformer as defined in the Typical Application Circuit, IF matching components affect the IF frequency range (Note 5) Using alternative Mini-Circuits TC4-1W-7A 4:1 transformer as defined in the Typical Application Circuit, IF matching components affect the IF frequency range (Note 5) (Note 5) MIN TYP MAX UNITS
MAX19994A
100
500 MHz
IF Frequency
fIF
50
250
LO Drive Level
PLO
-6
+3
dBm
5.0V SUPPLY, HIGH-SIDE INJECTION AC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). R1 = R4 = 681I, R2 = R5 = 1.82kI, VCC = 4.75V to 5.25V, RF and LO ports are driven from 50I sources, PLO = -6dBm to +3dBm, PRF = -5dBm, fRF = 1200MHz to 1700MHz, fLO = 1550MHz to 2050MHz, fIF = 350MHz, fRF < fLO, TC = -40NC to +85NC. Typical values are at VCC = 5.0V, PRF = -5dBm, PLO = 0dBm, fRF = 1450MHz, fLO = 1800MHz, fIF = 350MHz, TC = +25NC. All parameters are guaranteed by design and characterization, unless otherwise noted.) (Note 6) PARAMETER SYMBOL CONDITIONS TC = +25NC (Note 7) TC = +25NC, fRF = 1427MHz to 1463MHz (Note 7) fRF = 1427MHz to 1463MHz TC = -40NC to +85NC fRF = 1450MHz (Notes 7, 8) fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone, fRF = 1427MHz to 1463MHz, TC = +25NC (Note 7) fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone, fRF = 1427MHz to 1463MHz Input Third-Order Intercept Point Variation Over Temperature TCIIP3 fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone, TC = -40NC to +85NC Single sideband, no blockers present Noise Figure (Note 9) NFSSB fRF = 1427MHz to 1463MHz, TC = +25NC, PLO = 0dBm, single sideband, no blockers present fRF = 1427MHz to 1463MHz, PLO = 0dBm, single sideband, no blockers present Noise Figure Temperature Coefficient Noise Figure with Blocker TCNF Single sideband, no blockers present, TC = -40NC to +85NC PBLOCKER = +8dBm, fRF = 1450MHz, fLO = 1800MHz, fBLOCKER = 1350MHz, PLO = 0dBm, VCC = 5.0V, TC = +25NC (Notes 9, 10) 12.6 21.5 23.0 MIN 6.2 Conversion Gain GC 7.0 7.9 TYP 8.4 8.4 8.4 Q0.05 -0.01 14.0 25.0 25.0 MAX 9.8 9.0 8.9 dB dB/NC dBm dB UNITS
Conversion Gain Flatness Gain Variation Over Temperature Input Compression Point
DGC TCCG IP1dB
Input Third-Order Intercept Point
IIP3
dBm
22
25.0 Q0.75 9.8 9.8 9.8 0.016 13 11 12.5 dB/NC dB dBm
NFB
20.2
22
dB
3
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz Downconversion Mixer with LO Buffer/Switch
MAX19994A
5.0V SUPPLY, HIGH-SIDE INJECTION AC ELECTRICAL CHARACTERISTICS (continued)
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). R1 = R4 = 681I, R2 = R5 = 1.82kI, VCC = 4.75V to 5.25V, RF and LO ports are driven from 50I sources, PLO = -6dBm to +3dBm, PRF = -5dBm, fRF = 1200MHz to 1700MHz, fLO = 1550MHz to 2050MHz, fIF = 350MHz, fRF < fLO, TC = -40NC to +85NC. Typical values are at VCC = 5.0V, PRF = -5dBm, PLO = 0dBm, fRF = 1450MHz, fLO = 1800MHz, fIF = 350MHz, TC = +25NC. All parameters are guaranteed by design and characterization, unless otherwise noted.) (Note 6) PARAMETER SYMBOL CONDITIONS fRF = 1450MHz, fLO = 1800MHz, fSPUR = 1625MHz 2LO - 2RF Spur Rejection (Note 9) 2x2 fRF = 1450MHz, fLO = 1800MHz, fSPUR = 1625MHz, PLO = 0dBm, VCC = 5.0V, TC = +25NC fRF = 1450MHz, fLO = 1800MHz, fSPUR = 1683.33MHz 3LO - 3RF Spur Rejection (Note 9) 3x3 fRF = 1450MHz, fLO = 1800MHz, fSPUR = 1683.33MHz, PLO = 0dBm, VCC = 5.0V, TC = +25NC PRF = -10dBm PRF = -5dBm PRF = -10dBm PRF = -5dBm PRF = -10dBm PRF = -5dBm PRF = -10dBm PRF = -5dBm MIN 57 52 58 53 68 58 70 60 TYP 68 63 68 63 84 74 84 74 17 16 dB 20 200 I dB dBc dBc MAX UNITS
RF Input Return Loss
LO and IF terminated into matched impedance, LO "on" LO port selected, RF and IF terminated into matched impedance LO port unselected, RF and IF terminated into matched impedance ZIF Nominal differential impedance of the IF outputs RF terminated into 50I, LO driven by 50I source, IF transformed to 50I using external components shown in the Typical Application Circuit (Note 7) (Note 7) (Note 7) (Note 7) RFMAIN converted power measured at IFDIV relative to IFMAIN, all unused ports terminated to 50I RFDIV converted power measured at IFMAIN relative to IFDIV, all unused ports terminated to 50I PLO1 = +3dBm, PLO2 = +3dBm, fLO1 = 1800MHz, fLO2 = 1801MHz (Note 7) 50% of LOSEL to IF settled within 2 degrees 43 19
LO Input Return Loss
IF Output Impedance
IF Output Return Loss RF-to-IF Isolation LO Leakage at RF Port 2LO Leakage at RF Port LO Leakage at IF Port
13.0 30 -42 -30 -35 47
dB dB dBm dBm dBm
Channel Isolation (Note 7)
dB 43 42 47 48 50 dB ns
LO-to-LO Isolation LO Switching Time 4
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz Downconversion Mixer with LO Buffer/Switch
3.3V SUPPLY, HIGH-SIDE INJECTION AC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). R1 = R4 = 681I, R2 = R5 = 1.43kI. Typical values are at VCC = 3.3V, PRF = -5dBm, PLO = 0dBm, fRF = 1450MHz, fLO = 1800MHz, fIF = 350MHz, TC = +25NC, unless otherwise noted.) (Note 6) PARAMETER Conversion Gain Conversion Gain Flatness Gain Variation Over Temperature Input Compression Point Input Third-Order Intercept Point Input Third-Order Intercept Point Variation Over Temperature Noise Figure Noise Figure Temperature Coefficient 2LO - 2RF Spur Rejection 3LO - 3RF Spur Rejection RF Input Return Loss SYMBOL GC DGC TCCG IP1dB IIP3 TCIIP3 NFSSB TCNF 2x2 3x3 (Note 7) fRF = 1427MHz to 1463MHz TC = -40NC to +85NC (Note 8) fRF1 - fRF2 = 1MHz fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone, TC = -40NC to +85NC Single sideband, no blockers present Single sideband, no blockers present, TC = -40NC to +85NC PRF = -10dBm PRF = -5dBm PRF = -10dBm PRF = -5dBm LO and IF terminated into matched impedance, LO "on" LO port selected, RF and IF terminated into matched impedance LO port unselected, RF and IF terminated into matched impedance RF terminated into 50I, LO driven by 50I source, IF transformed to 50I using external components shown in the Typical Application Circuit CONDITIONS MIN TYP 8.2 0.05 -0.01 10.6 23.6 0.5 9.8 0.016 68 63 77 67 15 18 dB 21 MAX UNITS dB dB dB/NC dBm dBm dBm dB dB/NC dBc dBc dB
MAX19994A
LO Input Return Loss
IF Output Return Loss
12.5
dB
RF-to-IF Isolation LO Leakage at RF Port 2LO Leakage at RF Port LO Leakage at IF Port RFMAIN converted power measured at IFDIV relative to IFMAIN, all unused ports terminated to 50I RFDIV converted power measured at IFMAIN relative to IFDIV, all unused ports terminated to 50I PLO1 = +3dBm, PLO2 = +3dBm, fLO1 = 1800MHz, fLO2 = 1801MHz 50% of LOSEL to IF settled within 2 degrees
31 -49 -40 -35 48
dB dBm dBm dBm
Channel Isolation
dB 48
LO-to-LO Isolation LO Switching Time
50 50
dB ns
5
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz Downconversion Mixer with LO Buffer/Switch
MAX19994A
5.0V SUPPLY, LOW-SIDE INJECTION AC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit optimized for the Extended RF Band (see Table 1), R1 = R4 = 681I, R2 = R5 = 1.82kI. Typical values are at VCC = 5.0V, PRF = -5dBm, PLO = 0dBm, fRF = 1850MHz, fLO = 1500MHz, fIF = 350MHz, TC = +25NC, unless otherwise noted.) (Note 6) PARAMETER Conversion Gain Conversion Gain Flatness Gain Variation Over Temperature Input Compression Point Input Third-Order Intercept Point Input Third-Order Intercept Point Variation Over Temperature Noise Figure Noise Figure Temperature Coefficient 2RF - 2LO Spur Rejection 3RF - 3LO Spur Rejection RF Input Return Loss SYMBOL GC DGC TCCG IP1dB IIP3 TCIIP3 NFSSB TCNF 2x2 3x3 fRF = 1700MHz to 2000MHz, over any 100MHz band TC = -40NC to +85NC (Note 8) fRF1 - fRF2 = 1MHz fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone, TC = -40NC to +85NC Single sideband, no blockers present Single sideband, no blockers present, TC = -40NC to +85NC PRF = -10dBm PRF = -5dBm PRF = -10dBm PRF = -5dBm LO and IF terminated into matched impedance, LO "on" LO port selected, RF and IF terminated into matched impedance LO port unselected, RF and IF terminated into matched impedance RF terminated into 50I, LO driven by 50I source, IF transformed to 50I using external components shown in the Typical Application Circuit CONDITIONS MIN TYP 7.9 Q0.06 -0.007 13.9 24.9 Q0.6 10.2 0.017 68 63 87 77 14 29 dB 28 MAX UNITS dB dB dB/NC dBm dBm dBm dB dB/NC dBc dBc dB
LO Input Return Loss
IF Output Return Loss
14.5
dB
RF-to-IF Isolation LO Leakage at RF Port 2LO Leakage at RF Port LO Leakage at IF Port RFMAIN converted power measured at IFDIV relative to IFMAIN, all unused ports terminated to 50I RFDIV converted power measured at IFMAIN relative to IFDIV, all unused ports terminated to 50I PLO1 = +3dBm, PLO2 = +3dBm, fLO1 = 1500MHz, fLO2 = 1501MHz 50% of LOSEL to IF settled within 2 degrees
37 -52 -29 -19.4 43
dB dBm dBm dBm
Channel Isolation
dB 43
LO-to-LO Isolation LO Switching Time
54 50
dB ns
Note 5: Not production tested. Operation outside this range is possible, but with degraded performance of some parameters. See the Typical Operating Characteristics. 6
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz Downconversion Mixer with LO Buffer/Switch
Note 6: All limits reflect losses of external components, including a 0.8dB loss at fIF = 350MHz due to the 4:1 transformer. Output measurements were taken at IF outputs of the Typical Application Circuit. Note 7: 100% production tested for functionality. Note 8: Maximum reliable continuous input power applied to the RF or IF port of this device is +12dBm from a 50I source. Note 9: Not production tested. Note 10: Measured with external LO source noise filtered so the noise floor is -174dBm/Hz. This specification reflects the effects of all SNR degradations in the mixer, including the LO noise, as defined in Application Note 2021: Specifications and Measurement of Local Oscillator Noise in Integrated Circuit Base Station Mixers.
MAX19994A
Typical Operating Characteristics
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). VCC = 5.0V, fRF = 1200MHz to 1700MHz, LO is high-side injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25C, unless otherwise noted.)
CONVERSION GAIN vs. RF FREQUENCY
MAX19994A toc01
CONVERSION GAIN vs. RF FREQUENCY
MAX19994A toc02
CONVERSION GAIN vs. RF FREQUENCY
MAX19994A toc03
10 TC = -40C 9
10
10
CONVERSION GAIN (dB)
CONVERSION GAIN (dB)
8 TC = +85C
8 PLO = -6dBm, -3dBm, 0dBm, +3dBm 7
CONVERSION GAIN (dB)
9
9
8 VCC = 4.75V, 5.0V, 5.25V 7
7
TC = +25C
6 1200 1300 1400 1500 1600 1700 RF FREQUENCY (MHz)
6 1200 1300 1400 1500 1600 1700 RF FREQUENCY (MHz)
6 1200 1300 1400 1500 1600 1700 RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
MAX19994A toc04
INPUT IP3 vs. RF FREQUENCY
PRF = -5dBm/TONE PLO = +3dBm PLO = 0dBm
MAX19994A toc05
INPUT IP3 vs. RF FREQUENCY
PRF = -5dBm/TONE VCC = 5.25V
MAX19994A toc06
27 TC = +85C 26 INPUT IP3 (dBm) 25 24 TC = +25C 23 22 1200 1300 1400
PRF = -5dBm/TONE
27 26 INPUT IP3 (dBm) 25 24 PLO = -3dBm 23 22
27 26 INPUT IP3 (dBm) 25 VCC = 5.0V 24 23 22
PLO = -6dBm
VCC = 4.75V
TC = -40C
1500
1600
1700
1200
1300
1400
1500
1600
1700
1200
1300
1400
1500
1600
1700
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
7
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz Downconversion Mixer with LO Buffer/Switch
MAX19994A
Typical Operating Characteristics (continued)
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). VCC = 5.0V, fRF = 1200MHz to 1700MHz, LO is high-side injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25C, unless otherwise noted.)
NOISE FIGURE vs. RF FREQUENCY
MAX19994A toc07
NOISE FIGURE vs. RF FREQUENCY
MAX19994A toc08
NOISE FIGURE vs. RF FREQUENCY
MAX19994A toc09
12 TC = +85C 11 NOISE FIGURE (dB) 10 9 8 TC = -40C 7 6 1200 1300 1400 1500 1600 TC = +25C
12 11 NOISE FIGURE (dB) 10 9 PLO = -6dBm, -3dBm, 0dBm, +3dBm 8 7 6
12 11 NOISE FIGURE (dB) 10 9 VCC = 4.75V, 5.0V, 5.25V 8 7 6
1700
1200
1300
1400
1500
1600
1700
1200
1300
1400
1500
1600
1700
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
2LO - 2RF RESPONSE vs. RF FREQUENCY
MAX19994A toc10
2LO - 2RF RESPONSE vs. RF FREQUENCY
MAX19994A toc11
2LO - 2RF RESPONSE vs. RF FREQUENCY
PRF = -5dBm 2LO - 2RF RESPONSE (dBc)
MAX19994A toc12 MAX19994A toc15
80 PRF = -5dBm 2LO - 2RF RESPONSE (dBc)
80 PRF = -5dBm 2LO - 2RF RESPONSE (dBc)
80
70
TC = +85C
70
PLO = +3dBm
PLO = 0dBm
70
60 TC = -40C TC = +25C 50 1200 1300 1400 1500 1600 1700 RF FREQUENCY (MHz)
60 PLO = -3dBm PLO = -6dBm 50 1200 1300 1400 1500 1600 1700 RF FREQUENCY (MHz)
60 VCC = 4.75V, 5.0V, 5.25V
50 1200 1300 1400 1500 1600 1700 RF FREQUENCY (MHz)
3LO - 3RF RESPONSE vs. RF FREQUENCY
MAX19994A toc13
3LO - 3RF RESPONSE vs. RF FREQUENCY
PRF = -5dBm
MAX19994A toc14
3LO - 3RF RESPONSE vs. RF FREQUENCY
95 PRF = -5dBm
95
PRF = -5dBm TC = +25C TC = +85C
95
3LO - 3RF RESPONSE (dBc)
3LO - 3RF RESPONSE (dBc)
85
85 PLO = -6dBm 75
3LO - 3RF RESPONSE (dBc)
85
VCC = 4.75V
75
75 VCC = 5.25V VCC = 5.0V
65 TC = -40C 55 1200 1300 1400 1500 1600 1700 RF FREQUENCY (MHz)
65
PLO = -3dBm, 0dBm, +3dBm
65
55 1200 1300 1400 1500 1600 1700 RF FREQUENCY (MHz)
55 1200 1300 1400 1500 1600 1700 RF FREQUENCY (MHz)
8
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). VCC = 5.0V, fRF = 1200MHz to 1700MHz, LO is high-side injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25C, unless otherwise noted.)
INPUT P1dB vs. RF FREQUENCY
MAX19994A toc16
MAX19994A
INPUT P1dB vs. RF FREQUENCY
MAX19994A toc17
INPUT P1dB vs. RF FREQUENCY
VCC = 5.25V 15 INPUT P1dB (dBm) 14 13 VCC = 4.75V 12 11 VCC = 5.0V
MAX19994A toc18
16 15 INPUT P1dB (dBm) 14 13 12 11 1200 1300 1400 1500 1600 TC = -40C TC = +25C
16 15 INPUT P1dB (dBm) 14 13 12 11
16
TC = +85C
PLO = -6dBm, -3dBm, 0dBm, +3dBm
1700
1200
1300
1400
1500
1600
1700
1200
1300
1400
1500
1600
1700
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
CHANNEL ISOLATION vs. RF FREQUENCY
MAX19994A toc19
CHANNEL ISOLATION vs. RF FREQUENCY
MAX19994A toc20
CHANNEL ISOLATION vs. RF FREQUENCY
MAX19994A toc21
60 55 CHANNEL ISOLATION (dB) 50 45 40 35 30 1200 1300 1400 1500 1600 TC = -40C, +25C, +85C
60 55 CHANNEL ISOLATION (dB) 50 45 40 35 30 PLO = -6dBm, -3dBm, 0dBm, +3dBm
60 55 CHANNEL ISOLATION (dB) 50 45 VCC = 4.75V, 5.0V, 5.25V 40 35 30
1700
1200
1300
1400
1500
1600
1700
1200
1300
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
1400 1500 1600 RF FREQUENCY (MHz)
1700
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
MAX19994A toc22
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
MAX19994A toc23
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
MAX19994A toc24
-20 LO LEAKAGE AT IF PORT (dBm) -25 -30 -35 TC = +25C -40 TC = -40C -45 -50 1550 1650 1750 1850 1950 LO FREQUENCY (MHz) TC = +85C
-20 LO LEAKAGE AT IF PORT (dBm) -25 -30 -35 PLO = -3dBm -40 -45 -50 PLO = -6dBm PLO = +3dBm PLO = 0dBm
-20 LO LEAKAGE AT IF PORT (dBm) -25 -30 -35 -40 -45 -50 VCC = 4.75V VCC = 5.0V VCC = 5.25V
2050
1550
1650
1750 1850 1950 LO FREQUENCY (MHz)
2050
1550
1650
1750 1850 1950 LO FREQUENCY (MHz)
2050
9
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz Downconversion Mixer with LO Buffer/Switch
MAX19994A
Typical Operating Characteristics (continued)
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). VCC = 5.0V, fRF = 1200MHz to 1700MHz, LO is high-side injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25C, unless otherwise noted.)
RF-TO-IF ISOLATION vs. RF FREQUENCY
MAX19994A toc25
RF-TO-IF ISOLATION vs. RF FREQUENCY
MAX19994A toc26
RF-TO-IF ISOLATION vs. RF FREQUENCY
VCC = 5.25V
RF-TO-IF ISOLATION (dB)
MAX19994A toc27
50
50
50
TC = +85C
RF-TO-IF ISOLATION (dB) 40
PLO = +3dBm
RF-TO-IF ISOLATION (dB)
VCC = 5.0V
40
TC = +25C
40
PLO = 0dBm PLO = -3dBm
VCC = 4.75V
30
30
30
TC = -40C
20 1200 1300 1400 1500 1600 1700 RF FREQUENCY (MHz) 20 1200
PLO = -6dBm
20 1300 1400 1500 1600 1700 1200 1300 1400 1500 1600 1700 RF FREQUENCY (MHz) RF FREQUENCY (MHz)
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX19994A toc28
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX19994A toc29
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX19994A toc30
-20 LO LEAKAGE AT RF PORT (dBm) -30 -40 -50 -60 -70 1400 1600 1800 2000
-20 LO LEAKAGE AT RF PORT (dBm) -30 -40 -50 -60 -70
-20 LO LEAKAGE AT RF PORT (dBm) -30 -40 -50 -60 -70
TC = -40C TC = +25C
PLO = +3dBm
PLO = 0dBm
TC = +85C
PLO = -3dBm
PLO = -6dBm
VCC = 4.75V, 5.0V, 5.25V
2200
1400
1600
1800
2000
2200
1400
1600
1800
2000
2200
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX19994A toc31
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX19994A toc32
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX19994A toc33
-10 2LO LEAKAGE AT RF PORT (dBm) -20
-10 2LO LEAKAGE AT RF PORT (dBm) -20 -30 -40
-10 2LO LEAKAGE AT RF PORT (dBm) -20 -30 -40 -50 -60
TC = -40C TC = +25C
PLO = +3dBm PLO = 0dBm
PLO = -3dBm
VCC = 5.25V
-30 -40 -50 -60 1400 1600 1800 2000 2200 LO FREQUENCY (MHz)
VCC = 5.0V
TC = +85C
PLO = -6dBm
-50 -60 1400 1600 1800 2000 2200 LO FREQUENCY (MHz)
VCC = 4.75V
1400
1600
1800
2000
2200
LO FREQUENCY (MHz)
10
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). VCC = 5.0V, fRF = 1200MHz to 1700MHz, LO is high-side injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25C, unless otherwise noted.)
LO SWITCH ISOLATION vs. LO FREQUENCY
MAX19994A toc34
MAX19994A
LO SWITCH ISOLATION vs. LO FREQUENCY
MAX19994A toc35
LO SWITCH ISOLATION vs. LO FREQUENCY
MAX19994A toc36
65
65
65
LO SWITCH ISOLATION (dB)
LO SWITCH ISOLATION (dB)
55
55
LO SWITCH ISOLATION (dB)
TC = -40C
55
45
TC = +25C TC = +85C
45
PLO = -6dBm, -3dBm, 0dBm, +3dBm
45
VCC = 4.75V, 5.0V, 5.25V
35 1400 1600 1800 2000 2200 LO FREQUENCY (MHz)
35 1400 1600 1800 2000 2200 LO FREQUENCY (MHz)
35 1400 1600 1800 2000 2200 LO FREQUENCY (MHz)
RF PORT RETURN LOSS vs. RF FREQUENCY
MAX19994A toc37
IF PORT RETURN LOSS vs. IF FREQUENCY
MAX19994A toc38
RF PORT RETURN LOSS (dB)
IF PORT RETURN LOSS (dB)
5 10
5 10 15 20 25 30
LO SELECTED PORT RETURN LOSS (dB)
IF = 350MHz
LO = 1550MHz
10
PLO = -6dBm, -3dBm, 0dBm, +3dBm
15 20 25 30 1200 1300 1400 1500 1600 1700 RF FREQUENCY (MHz)
PLO = +3dBm
20
LO = 1800MHz LO = 2050MHz
50 140 230 320 410 500
PLO = 0dBm
30
PLO = -3dBm PLO = -6dBm
40 1400 1600 1800 2000 2200 LO FREQUENCY (MHz)
IF FREQUENCY (MHz)
LO UNSELECTED PORT RETURN LOSS vs. LO FREQUENCY
MAX19994A toc40
SUPPLY CURRENT vs.TEMPERATURE (TC)
MAX19994A toc41
0 LO UNSELECTED PORT RETURN LOSS (dB)
360 350 SUPPLY CURRENT (mA)
10
VCC = 5.25V
340 330 320 310 300 -40 -15 10 35 60
20
30
PLO = -6dBm, -3dBm, 0dBm, +3dBm
VCC = 5.0V
VCC = 4.75V
40 1400 1600 1800 2000 2200 LO FREQUENCY (MHz)
85
TEMPERATURE (C)
11
MAX19994A toc39
0
0
LO SELECTED PORT RETURN LOSS vs. LO FREQUENCY
0
VCC = 4.75V, 5.0V, 5.25V
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz Downconversion Mixer with LO Buffer/Switch
MAX19994A
Typical Operating Characteristics (continued)
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). VCC = 3.3V, fRF = 1200MHz to 1700MHz, LO is high-side injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25C, unless otherwise noted.)
CONVERSION GAIN vs. RF FREQUENCY
MAX19994A toc42
CONVERSION GAIN vs. RF FREQUENCY
MAX19994A toc43
CONVERSION GAIN vs. RF FREQUENCY
MAX19994A toc44
10
10
10
TC = -40C
CONVERSION GAIN (dB) 9
VCC = 3.3V
VCC = 3.3V
CONVERSION GAIN (dB) 9
8
8
CONVERSION GAIN (dB)
9
VCC = 3.6V
8
PLO = -6dBm, -3dBm, 0dBm, +3dBm
7
VCC = 3.3V
7
7
TC = +85C
TC = +25C
VCC = 3.0V
6 1200 1300 1400 1500 1600 1700 RF FREQUENCY (MHz)
6 1200 1300 1400 1500 1600 1700 RF FREQUENCY (MHz)
6 1200 1300 1400 1500 1600 1700 RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
MAX19994A toc45
INPUT IP3 vs. RF FREQUENCY
MAX19994A toc46
INPUT IP3 vs. RF FREQUENCY
VCC = 3.6V
25 INPUT IP3 (dBm) 24 23 22 21 20
25 INPUT IP3 (dBm) 24 23
TC = +85C
VCC = 3.3V PRF = -5dBm/TONE
25 INPUT IP3 (dBm) 24 23 22 21 20
PLO = +3dBm
VCC = 3.3V PRF = -5dBm/TONE PLO = 0dBm
PRF = -5dBm/TONE
TC = +25C
22 21 20 1200 1300 1400 1500 1600 1700 RF FREQUENCY (MHz)
PLO = -3dBm PLO = -6dBm
VCC = 3.0V V = 3.3V CC
TC = -40C
1200
1300
1400
1500
1600
1700
1200
1300
1400
1500
1600
1700
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
NOISE FIGURE vs. RF FREQUENCY
MAX19994A toc48
NOISE FIGURE vs. RF FREQUENCY
MAX19994A toc49
NOISE FIGURE vs. RF FREQUENCY
MAX19994A toc50
13 12 NOISE FIGURE (dB) 11 10 9
VCC = 3.3V TC = +85C
13 12 NOISE FIGURE (dB) 11 10 9 8
VCC = 3.3V
13 12 NOISE FIGURE (dB) 11 10 9 8 7
TC = +25C
8
PLO = -6dBm, -3dBm, 0dBm, +3dBm
VCC = 3.0V, 3.3V, 3.6V
TC = -40C
7 1200 1300 1400 1500 1600 1700 RF FREQUENCY (MHz) 7 1200 1300 1400 1500 1600 1700 RF FREQUENCY (MHz) 1200 1300 1400 1500 1600 1700
RF FREQUENCY (MHz)
12
MAX19994A toc47
26
26
26
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). VCC = 3.3V, fRF = 1200MHz to 1700MHz, LO is high-side injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25C, unless otherwise noted.)
2LO - 2RF RESPONSE vs. RF FREQUENCY
MAX19994A toc51
MAX19994A
2LO - 2RF RESPONSE vs. RF FREQUENCY
MAX19994A toc52
2LO - 2RF RESPONSE vs. RF FREQUENCY
PRF = -5dBm
2LO - 2RF RESPONSE (dBc)
MAX19994A toc53
80
VCC = 3.3V PRF = -5dBm
80
VCC = 3.3V PRF = -5dBm
80
2LO - 2RF RESPONSE (dBc)
2LO - 2RF RESPONSE (dBc)
70
TC = +85C
70
PLO = +3dBm PLO = 0dBm
70
VCC = 3.6V
60
60
60
TC = -40C
50 1200 1300 1400 1500
VCC = 3.3V
TC = +25C
50 1600 1700 1200
VCC = 3.0V
PLO = -6dBm
1300 1400
PLO = -3dBm
50 1500 1600 1700 1200 1300 1400 1500 1600 1700
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
3LO - 3RF RESPONSE vs. RF FREQUENCY
MAX19994A toc54
3LO - 3RF RESPONSE vs. RF FREQUENCY
VCC = 3.3V PRF = -5dBm
MAX19994A toc55
3LO - 3RF RESPONSE vs. RF FREQUENCY
PRF = -5dBm
3LO - 3RF RESPONSE (dBc) 75
MAX19994A toc56
85
VCC = 3.3V PRF = -5dBm TC = +85C
85
85
3LO - 3RF RESPONSE (dBc)
75
3LO - 3RF RESPONSE (dBc)
75
VCC = 3.6V
65
65
65
TC = +25C
55
PLO = -6dBm, -3dBm, 0dBm, +3dBm
55
VCC = 3.3V
55
TC = -40C
VCC = 3.0V
45 1200 1300 1400 1500 1600 1700 RF FREQUENCY (MHz)
45 1200 1300 1400 1500 1600 1700 RF FREQUENCY (MHz)
45 1200 1300 1400 1500 1600 1700 RF FREQUENCY (MHz)
INPUT P1dB vs. RF FREQUENCY
MAX19994A toc57
INPUT P1dB vs. RF FREQUENCY
MAX19994A toc58
INPUT P1dB vs. RF FREQUENCY
MAX19994A toc59
13 12 INPUT P1dB (dBm) 11 10 9 8 1200 1300 1400 1500
VCC = 3.3V TC = +85C
13 12 INPUT P1dB (dBm) 11 10 9 8
VCC = 3.3V
13 12 INPUT P1dB (dBm) 11 10
VCC = 3.6V
TC = +25C TC = -40C
PLO = -6dBm, -3dBm, 0dBm, +3dBm
VCC = 3.3V
9 8
VCC = 3.0V
1600
1700
1200
1300
1400
1500
1600
1700
1200
1300
1400
1500
1600
1700
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
13
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz Downconversion Mixer with LO Buffer/Switch
MAX19994A
Typical Operating Characteristics (continued)
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). VCC = 3.3V, fRF = 1200MHz to 1700MHz, LO is high-side injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25C, unless otherwise noted.)
CHANNEL ISOLATION vs. RF FREQUENCY
MAX19994A toc60
60
CHANNEL ISOLATION vs. RF FREQUENCY
VCC = 3.3V 55 CHANNEL ISOLATION (dB) 50 45 PLO = -6dBm, -3dBm, 0dBm, +3dBm 40 35
MAX19994A toc61
CHANNEL ISOLATION vs. RF FREQUENCY
MAX19994A toc62
VCC = 3.3V
55 CHANNEL ISOLATION (dB) 50 45 40 35 30 1200 1300 1400 1500 1600
60
60 55 CHANNEL ISOLATION (dB) 50 45 VCC = 3.0V, 3.3V, 3.6V 40 35 30
TC = -40C, +25C, +85C
1700
30 1200 1300 1400 1500 1600 1700 RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
1200
1300
1400
1500
1600
1700
RF FREQUENCY (MHz)
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
MAX19994A toc63
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
MAX19994A toc64
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
MAX19994A toc65
-20 VCC = 3.3V LO LEAKAGE AT IF PORT (dBm) -25 -30 -35 -40 -45 -50 1550 1650 1750 1850 1950 TC = +25C TC = +85C
-20 VCC = 3.3V LO LEAKAGE AT IF PORT (dBm) -25 PLO = +3dBm -30 -35 -40 -45 -50 PLO = -6dBm PLO = -3dBm PLO = 0dBm
-20 -25 -30 -35 -40 -45 -50 VCC = 3.0V VCC = 3.3V VCC = 3.6V
TC = -40C
2050
1550
1650
1750
1850
1950
LO LEAKAGE AT IF PORT (dBm)
2050
1550
1650
1750
1850
1950
2050
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION vs. RF FREQUENCY
MAX19994A toc66
RF-TO-IF ISOLATION vs. RF FREQUENCY
MAX19994A toc67
RF-TO-IF ISOLATION vs. RF FREQUENCY
MAX19994A toc68
50 VCC = 3.3V TC = +85C RF-TO-IF ISOLATION (dB) 40 TC = +25C
50 VCC = 3.3V RF-TO-IF ISOLATION (dB) PLO = +3dBm 40 PLO = 0dBm
50 VCC = 3.3V RF-TO-IF ISOLATION (dB) 40 VCC = 3.0V
VCC = 3.6V 30
30 TC = -40C 20 1200 1300 1400 1500 1600 1700 RF FREQUENCY (MHz)
30
PLO = -3dBm PLO = -6dBm
20 1200 1300 1400 1500 1600 1700 RF FREQUENCY (MHz)
20 1200 1300 1400 1500 1600 1700 RF FREQUENCY (MHz)
14
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). VCC = 3.3V, fRF = 1200MHz to 1700MHz, LO is high-side injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25C, unless otherwise noted.)
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX19994A toc69
MAX19994A
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX19994A toc70
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX19994A toc71
-20 VCC = 3.3V LO LEAKAGE AT RF PORT (dBm) -30 TC = -40C -40 -50 TC = +85C -60 -70 1400 1600 1800 2000 TC = +25C
-20 VCC = 3.3V LO LEAKAGE AT RF PORT (dBm) -30 PLO = +3dBm -40 -50 PLO = -3dBm -60 -70 PLO = -6dBm PLO = 0dBm
-20 LO LEAKAGE AT RF PORT (dBm) -30 VCC = 3.6V -40 -50 VCC = 3.0V -60 -70 VCC = 3.3V
2200
1400
1600
1800
2000
2200
1400
1600
1800
2000
2200
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX19994A toc72
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX19994A toc73
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX19994A toc74
-10 VCC = 3.3V 2LO LEAKAGE AT RF PORT (dBm) -20 TC = -40C -30 -40 TC = +85C -50 -60 1400 1600 1800 2000 TC = +25C
-10 VCC = 3.3V 2LO LEAKAGE AT RF PORT (dBm) -20 PLO = +3dBm -30 -40 PLO = -6dBm PLO = -3dBm -50 -60 PLO = 0dBm
-10 2LO LEAKAGE AT RF PORT (dBm) -20 -30 -40 -50 -60 VCC = 3.6V VCC = 3.3V
VCC = 3.0V
2200
1400
1600
1800
2000
2200
1400
1600
1800
2000
2200
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO SWITCH ISOLATION vs. LO FREQUENCY
MAX19994A toc75
LO SWITCH ISOLATION vs. LO FREQUENCY
MAX19994A toc76
LO SWITCH ISOLATION vs. LO FREQUENCY
MAX19994A toc77
65 VCC = 3.3V LO SWITCH ISOLATION (dB) TC = -40C 55 TC = +25C
65 VCC = 3.3V LO SWITCH ISOLATION (dB)
65
55
LO SWITCH ISOLATION (dB)
55
45 TC = +85C 35 1400 1600 1800 2000 2200 LO FREQUENCY (MHz)
45
PLO = -6dBm, -3dBm, 0dBm, +3dBm
45
VCC = 3.0V, 3.3V, 3.6V
35 1400 1600 1800 2000 2200 LO FREQUENCY (MHz)
35 1400 1600 1800 2000 2200 LO FREQUENCY (MHz)
15
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz Downconversion Mixer with LO Buffer/Switch
MAX19994A
Typical Operating Characteristics (continued)
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). VCC = 3.3V, fRF = 1200MHz to 1700MHz, LO is high-side injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25C, unless otherwise noted.)
RF PORT RETURN LOSS vs. RF FREQUENCY
MAX19994A toc78
IF PORT RETURN LOSS vs. IF FREQUENCY
MAX19994A toc79
LO SELECTED PORT RETURN LOSS vs. LO FREQUENCY
LO SELECTED PORT RETURN LOSS (dB) VCC = 3.3V 10 PLO = +3dBm 20 PLO = 0dBm
MAX19994A toc80
0 5 10 15 20 25 30 1200 1300 1400 1500 1600 PLO = -6dBm, -3dBm, 0dBm, +3dBm VCC = 3.3V IF = 350MHz
0 VCC = 3.3V 5 IF PORT RETURN LOSS (dB) LO = 2050MHz 10 15 20 LO = 1550MHz 25 30
0
RF PORT RETURN LOSS (dB)
LO = 1800MHz
30 PLO = -3dBm 40 1400 PLO = -6dBm 1600 1800 2000 2200
1700
50
140
230
320
410
500
RF FREQUENCY (MHz)
IF FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO UNSELECTED PORT RETURN LOSS vs. LO FREQUENCY
LO UNSELECTED PORT RETURN LOSS (dB)
SUPPLY CURRENT vs. TEMPERATURE (TC)
MAX19994A toc81
VCC = 3.3V
10
VCC = 3.6V
SUPPLY CURRENT (mA) 280
20
260
VCC = 3.3V
240
30
PLO = -6dBm, -3dBm, 0dBm, +3dBm
40 1400 1600 1800 2000 2200 LO FREQUENCY (MHz) 220 -40
VCC = 3.0V
-15
10
35
60
85
TEMPERATURE (C)
16
MAX19994A toc82
0
300
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics
(Typical Application Circuit optimized for the Extended RF Band (see Table 1). VCC = 5.0V, fRF = 1700MHz to 2000MHz, LO is low-side injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25C, unless otherwise noted.)
CONVERSION GAIN vs. RF FREQUENCY
MAX19994A toc83
MAX19994A
CONVERSION GAIN vs. RF FREQUENCY
MAX19994A toc84
CONVERSION GAIN vs. RF FREQUENCY
MAX19994A toc85
10
10
10
TC = -40C
CONVERSION GAIN (dB) 9
8
CONVERSION GAIN (dB)
CONVERSION GAIN (dB)
9
9
8
8
7
7
PLO = -3dBm, 0dBm, +3dBm
7
VCC = 4.75V, 5.0V, 5.25V
TC = +85C
6 1700 1800
TC = +25C
6 1900 2000 1700 1800 1900 2000 6 1700 1800 1900 2000 RF FREQUENCY (MHz) RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
MAX19994A toc86
INPUT IP3 vs. RF FREQUENCY
MAX19994A toc87
INPUT IP3 vs. RF FREQUENCY
PRF = -5dBm/TONE
26 INPUT IP3 (dBm)
MAX19994A toc88
28
28
28
PRF = -5dBm/TONE TC = +85C
26 INPUT IP3 (dBm)
PRF = -5dBm/TONE
26 INPUT IP3 (dBm)
VCC = 5.25V
24
24
24
PLO = -3dBm, 0dBm, +3dBm
22
VCC = 5.0V
22
22
TC = -40C TC = +25C
VCC = 4.75V
20 1700 1800 1900 2000 RF FREQUENCY (MHz)
20 1700 1800 1900 2000 RF FREQUENCY (MHz)
20 1700 1800 1900 2000 RF FREQUENCY (MHz)
NOISE FIGURE vs. RF FREQUENCY
MAX19994A toc89
NOISE FIGURE vs. RF FREQUENCY
MAX19994A toc90
NOISE FIGURE vs. RF FREQUENCY
MAX19994A toc91
13
13 12 NOISE FIGURE (dB) 11 10 9 8 7
13 12 NOISE FIGURE (dB) 11 10 9 8 7 VCC = 4.75V, 5.0V, 5.25V
TC = +85C
12 NOISE FIGURE (dB) 11 10 9 8 7 1700 1800 1900
TC = +25C TC = -40C
PLO = -3dBm, 0dBm, +3dBm
2000
1700
1800
1900
2000
1700
1800
1900
2000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
17
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz Downconversion Mixer with LO Buffer/Switch
MAX19994A
Typical Operating Characteristics (continued)
(Typical Application Circuit optimized for the Extended RF Band (see Table 1). VCC = 5.0V, fRF = 1700MHz to 2000MHz, LO is low-side injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25C, unless otherwise noted.)
2RF - 2LO RESPONSE vs. RF FREQUENCY
MAX19994A toc92
2RF - 2LO RESPONSE vs. RF FREQUENCY
MAX19994A toc93
2RF - 2LO RESPONSE vs. RF FREQUENCY
PRF = -5dBm
MAX19994A toc94 MAX19994A toc100 MAX19994A toc97
80
PRF = -5dBm
80
PRF = -5dBm
80
2RF - 2LO RESPONSE (dBc)
2RF - 2LO RESPONSE (dBc)
70
TC = +85C
70
PLO = +3dBm PLO = 0dBm
2RF - 2LO RESPONSE (dBc)
70
60 TC = +25C TC = -40C
60 PLO = -3dBm
60 VCC = 4.75V, 5.0V, 5.25V
50 1700 1800 1900 2000 RF FREQUENCY (MHz)
50 1700 1800 1900 2000 RF FREQUENCY (MHz)
50 1700 1800 1900 2000 RF FREQUENCY (MHz)
3RF - 3LO RESPONSE vs. RF FREQUENCY
MAX19994A toc95
3RF - 3LO RESPONSE vs. RF FREQUENCY
PRF = -5dBm
MAX19994A toc96
3RF - 3LO RESPONSE vs. RF FREQUENCY
95 PRF = -5dBm
95 TC = +85C 3RF - 3LO RESPONSE (dBc) 85
PRF = -5dBm
95
3RF - 3LO RESPONSE (dBc)
85
3RF - 3LO RESPONSE (dBc)
85 VCC = 5.25V VCC = 5.0V 65 VCC = 4.75V
75 TC = -40C 65 TC = +25C 55 1700 1800 1900 2000 RF FREQUENCY (MHz)
75
75
65
PLO = -3dBm, 0dBm, +3dBm
55 1700 1800 1900 2000 RF FREQUENCY (MHz)
55 1700 1800 1900 2000 RF FREQUENCY (MHz)
INPUT P1dB vs. RF FREQUENCY
TC = +85C
MAX19994A toc98
INPUT P1dB vs. RF FREQUENCY
MAX19994A toc99
INPUT P1dB vs. RF FREQUENCY
16 15 INPUT P1dB (dBm) VCC = 5.0V 14 13 12 11 VCC = 5.25V
16 15 INPUT P1dB (dBm) 14 TC = +25C 13 TC = -40C 12 11 1700 1800 1900
16 15 INPUT P1dB (dBm) 14 13 12 11 PLO = -3dBm, 0dBm, +3dBm
VCC = 4.75V
2000
1700
1800
1900
2000
1700
1800
1900
2000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
18
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(Typical Application Circuit optimized for the Extended RF Band (see Table 1). VCC = 5.0V, fRF = 1700MHz to 2000MHz, LO is low-side injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25C, unless otherwise noted.)
CHANNEL ISOLATION vs. RF FREQUENCY
MAX19994A toc101
MAX19994A
CHANNEL ISOLATION vs. RF FREQUENCY
MAX19994A toc102
CHANNEL ISOLATION vs. RF FREQUENCY
MAX19994A toc103
50
50
50
CHANNEL ISOLATION (dB)
CHANNEL ISOLATION (dB)
45
45
CHANNEL ISOLATION (dB)
45
TC = -40C, +25C, +85C 40
PLO = -3dBm, 0dBm, +3dBm 40
VCC = 4.75V, 5.0V, 5.25V 40
35 1700 1800 1900 2000 RF FREQUENCY (MHz)
35 1700 1800 1900 2000 RF FREQUENCY (MHz)
35 1700 1800 1900 2000 RF FREQUENCY (MHz)
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
MAX19994A toc104
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
MAX19994A toc105
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
VCC = 5.25V
MAX19994A toc106
-10 TC = -40C LO LEAKAGE AT IF PORT (dBm) -15 -20 -25 -30 -35 -40 1350 1450 1550 TC = +85C TC = +25C
-10 -15 -20 PLO = -3dBm -25 -30 -35 -40 PLO = +3dBm PLO = 0dBm
-10 -15 -20 -25 -30 -35 -40 VCC = 4.75V VCC = 5.0V
LO LEAKAGE AT IF PORT (dBm)
1650
1350
1450
1550
1650
LO LEAKAGE AT IF PORT (dBm)
1350
1450
1550
1650
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION vs. RF FREQUENCY
MAX19994A toc107
RF-TO-IF ISOLATION vs. RF FREQUENCY
MAX19994A toc108
RF-TO-IF ISOLATION vs. RF FREQUENCY
MAX19994A toc109
50
50
50
RF-TO-IF ISOLATION (dB)
RF-TO-IF ISOLATION (dB)
40
40
RF-TO-IF ISOLATION (dB)
40
TC = -40C, +25C, +85C 30
PLO = -3dBm, 0dBm, +3dBm 30
VCC = 4.75V, 5.0V, 5.25V 30
20 1700 1800 1900 2000 RF FREQUENCY (MHz)
20 1700 1800 1900 2000 RF FREQUENCY (MHz)
20 1700 1800 1900 2000 RF FREQUENCY (MHz)
19
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz Downconversion Mixer with LO Buffer/Switch
MAX19994A
Typical Operating Characteristics (continued)
(Typical Application Circuit optimized for the Extended RF Band (see Table 1). VCC = 5.0V, fRF = 1700MHz to 2000MHz, LO is low-side injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25C, unless otherwise noted.)
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX19994A toc110
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX19994A toc111
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX19994A toc112
-20 LO LEAKAGE AT RF PORT (dBm) -30 -40 -50 -60 -70 1300 1450 1600 1750 1900 TC = +25C TC = +85C TC = -40C
-20 LO LEAKAGE AT RF PORT (dBm) -30 -40 -50 PLO = 0dBm -60 -70 PLO = +3dBm
-20 LO LEAKAGE AT RF PORT (dBm) -30 -40 -50 VCC = 4.75V, 5.0V, 5.25V -60 -70
PLO = -3dBm
2050
1300
1450
1600
1750
1900
2050
1300
1450
1600
1750
1900
2050
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX19994A toc113
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX19994A toc114
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX19994A toc115
-10 2LO LEAKAGE AT RF PORT (dBm) -20 -30 -40 -50 -60 1300 1450 1600 1750 1900 TC = +25C TC = +85C TC = -40C
-10
2LO LEAKAGE AT RF PORT (dBm)
-10 2LO LEAKAGE AT RF PORT (dBm) -20 -30 -40 -50 -60 VCC = 5.0V VCC = 4.75V VCC = 5.25V
-20 -30 -40
PLO = +3dBm
PLO = 0dBm
PLO = -3dBm -50 -60
2050
1300
1450
1600
1750
1900
2050
1300
1450
1600
1750
1900
2050
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO SWITCH ISOLATION vs. LO FREQUENCY
MAX19994A toc116
LO SWITCH ISOLATION vs. LO FREQUENCY
MAX19994A toc117
LO SWITCH ISOLATION vs. LO FREQUENCY
MAX19994A toc118
65 TC = -40C LO SWITCH ISOLATION (dB) TC = +25C 55
65
65
LO SWITCH ISOLATION (dB)
55
LO SWITCH ISOLATION (dB)
55
45
TC = +85C
45
PLO = -3dBm, 0dBm, +3dBm
45
VCC = 4.75V, 5.0V, 5.25V
35 1300 1475 1650 1825 2000 LO FREQUENCY (MHz)
35 1300 1475 1650 1825 2000 LO FREQUENCY (MHz)
35 1300 1475 1650 1825 2000 LO FREQUENCY (MHz)
20
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(Typical Application Circuit optimized for the Extended RF Band (see Table 1). VCC = 5.0V, fRF = 1700MHz to 2000MHz, LO is low-side injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25C, unless otherwise noted.)
RF PORT RETURN LOSS vs. RF FREQUENCY
MAX19994A toc119
MAX19994A
IF PORT RETURN LOSS vs. IF FREQUENCY
MAX19994A toc120
LO SELECTED PORT RETURN LOSS vs. LO FREQUENCY
LO SELECTED PORT RETURN LOSS (dB)
MAX19994A toc121
0 IF = 350MHz RF PORT RETURN LOSS (dB) 5 10 15 20 25 30 1700 1800 1900 PLO = -3dBm, 0dBm, +3dBm
0 5 IF PORT RETURN LOSS (dB) 10 15 20 25 30 VCC = 4.75V, 5.0V, 5.25V
0
10
PLO = +3dBm PLO = 0dBm
20
30
PLO = -3dBm
40
50 140 230 320 410 500
2000
1400
1600
1800
2000
2200
RF FREQUENCY (MHz)
IF FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO UNSELECTED PORT RETURN LOSS vs. LO FREQUENCY
MAX19994A toc122
SUPPLY CURRENT vs. TEMPERATURE (TC)
VCC = 5.25V VCC = 5.0V
MAX19994A toc123
0 LO UNSELECTED PORT RETURN LOSS (dB)
360 350 SUPPLY CURRENT (mA) 340 330 320 310
10
20 PLO = -3dBm, 0dBm, +3dBm 30
VCC = 4.75V -40 -15 10 35 60 85
40 1400 1600 1800 2000 2200 LO FREQUENCY (MHz)
300 TEMPERATURE (C)
21
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz Downconversion Mixer with LO Buffer/Switch
MAX19994A
Pin Configuration/Functional Block Diagram
GND GND GND GND GND VCC LO2 LO1 TOP VIEW LOSEL
27
26
25
24
23
22
21
20
19
N.C. LO_ADJ_M VCC IND_EXTM IFMIFM+ GND IFM_SET VCC
28 29 30 31 32 33 34 35 36
EXPOSED PAD
18 17 16 15 14 13 12 11 10
N.C. LO_ADJ_D VCC IND_EXTD IFDIFD+ GND IFD_SET VCC
MAX19994A
+
1
2
3
4
5
6
VCC
7
GND
8
TAPDIV
9
RFDIV
TAPMAIN
RFMAIN
GND
VCC
TQFN (6mm x 6mm)
EXPOSED PAD ON THE BOTTOM OF THE PACKAGE
GND
Pin Description
PIN 1 2 3, 5, 7, 12, 20, 22, 24, 25, 26, 34 4, 6, 10, 16, 21, 30, 36 8 NAME RFMAIN TAPMAIN FUNCTION Main Channel RF input. Internally matched to 50I. Requires an input DC-blocking capacitor. Main Channel Balun Center Tap. Bypass to GND with 39pF and 0.033FF capacitors as close as possible to the pin with the smaller value capacitor closer to the part.
GND
Ground
VCC
Power Supply. Bypass to GND with capacitors as close as possible to the pin, as shown in the Typical Application Circuit. Diversity Channel Balun Center Tap. Bypass to GND with 39pF and 0.033F capacitors as close as possible to the pin with the smaller value capacitor closer to the part.
TAPDIV
22
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz Downconversion Mixer with LO Buffer/Switch
Pin Description (continued)
PIN 9 11 13, 14 NAME RFDIV IFD_SET IFD+, IFDFUNCTION Diversity Channel RF input. Internally matched to 50I. Requires an input DC-blocking capacitor. IF Diversity Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for the diversity IF amplifier (see the Typical Application Circuit). Diversity Mixer Differential IF Output +/-. Connect pullup inductors from each of these pins to VCC (see the Typical Application Circuit). Diversity External Inductor Connection. Connect this pin to ground. For improved RF-to-IF and LO-to-IF isolation, connect a low-ESR 10nH inductor from this pin to ground (see the Typical Application Circuit). LO Diversity Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for the diversity LO amplifier (see the Typical Application Circuit). No Connection. Not internally connected. Local Oscillator 1 Input. This input is internally matched to 50I. Requires an input DC-blocking capacitor. Local Oscillator Select. Set this pin to high to select LO1. Set to low to select LO2. Local Oscillator 2 Input. This input is internally matched to 50I. Requires an input DC-blocking capacitor. LO Main Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for the main LO amplifier (see the Typical Application Circuit). Main External Inductor Connection. Connect this pin to ground. For improved RF-to-IF and LO-toIF isolation, connect a low-ESR 10nH inductor from this pin to ground (see the Typical Application Circuit). Main Mixer Differential IF Output -/+. Connect pullup inductors from each of these pins to VCC (see the Typical Application Circuit). IF Main Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for the main IF amplifier (see the Typical Application Circuit). Exposed Pad. Internally connected to GND. Solder this exposed pad to a PCB pad that uses multiple ground vias to provide heat transfer out of the device into the PCB ground planes. These multiple ground vias are also required to achieve the noted RF performance.
MAX19994A
15
IND_EXTD
17 18, 28 19 23 27 29
LO_ADJ_D N.C. LO1 LOSEL LO2 LO_ADJ_M
31
IND_EXTM
32, 33 35
IFM-, IFM+ IFM_SET
--
EP
Detailed Description
The MAX19994A is a dual-channel downconverter designed to provide up to 8.4dB of conversion gain, +25dBm input IP3, +14dBm 1dB input compression point, and a noise figure of 9.8dB. In addition to its high-linearity performance, the device achieves a high level of component integration. The device integrates two double-balanced mixers for twochannel downconversion. Both the main and diversity channels include a balun and matching circuitry to allow 50I single-ended interfaces to the RF ports and the two LO ports. An integrated single-pole/double-throw (SPDT) switch provides 50ns switching time between the two LO inputs, with 48dB of LO-to-LO isolation and -42dBm of
LO leakage at the RF port. Furthermore, the integrated LO buffers provide a high drive level to each mixer core, reducing the LO drive required at the device's inputs to a range of -6dBm to +3dBm. The IF ports for both channels incorporate differential outputs for downconversion, which is ideal for providing enhanced 2LO - 2RF performance. With an optimized 1450MHz to 2050MHz LO frequency range, this mixer supports both high- and low-side LO injection architectures for the 1200MHz to 1700MHz and 1700MHz to 2000MHz RF bands, respectively. The device also supports an IF range of 50MHz to 500MHz. The external IF components set the lower frequency range (see the Typical Operating Characteristics for
23
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz Downconversion Mixer with LO Buffer/Switch
MAX19994A
details). Operation beyond these ranges is possible; see the Typical Operating Characteristics for additional information. Although this device is optimized for a 1450MHz to 2050MHz LO frequency range, it can operate with even lower LO frequencies to support 1200MHz to 1700MHz low-side LO injection architectures. However, performance degrades as fLO continues to decrease. Contact the factory for a variant with increased low-side LO performance. The RF input ports for both the main and diversity channels are internally matched to 50I, requiring no external matching components when operating the device over a 1200MHz to 1700MHz RF frequency range. A DC-blocking capacitor is required as the input is internally DC shorted to ground through the on-chip balun. The RF port input return loss is typically better than 15dB over the 1200MHz to 1700MHz RF frequency range. The RF inputs of the device can also be matched to operate over an extended 1700MHz to 2000MHz RF frequency range of with the addition of two shunt 4.7nH inductors. See Table 1 for details. The device is optimized for a 1450MHz to 2050MHz LO frequency range. As an added feature, the device includes an internal LO SPDT switch for use in frequencyhopping applications. The switch selects one of the two single-ended LO ports, allowing the external oscillator to settle on a particular frequency before it is switched in. LO switching time is typically 50ns, which is more than adequate for typical GSM applications. If frequency hopping is not employed, simply set the switch to either of the LO inputs. The switch is controlled by a digital input (LOSEL), where logic-high selects LO1 and logic-low selects LO2. LO1 and LO2 inputs are internally matched to 50I, requiring only 39pF DC-blocking capacitors. If LOSEL is connected directly to a logic source, then voltage MUST be applied to VCC before digital logic is applied to LOSEL to avoid damaging the part. Alternatively, a 1kI resistor can be placed in series at the LOSEL to limit the input current in applications where LOSEL is applied before VCC. The main and diversity channels incorporate a two-stage LO buffer that allows for a wide-input power range for the LO drive. The on-chip low-loss baluns, along with LO buffers, drive the double-balanced mixers. All interfacing
24
and matching components from the LO inputs to the IF outputs are integrated on-chip. The core of the MAX19994A dual-channel downconverter consists of two double-balanced, high-performance passive mixers. Exceptional linearity is provided by the large LO swing from the on-chip LO buffers. When combined with the integrated IF amplifiers, the cascaded IIP3, 2LO - 2RF rejection, and noise-figure performance are typically +25dBm, 68dBc, and 9.8dB, respectively. The device has a 50MHz to 500MHz IF frequency range, where the low-end frequency depends on the frequency response of the external IF components. Note that these differential ports are ideal for providing enhanced IIP2 performance. Single-ended IF applications require a 4:1 (impedance ratio) balun to transform the 200I differential IF impedance to a 50I single-ended system. After the balun, the return loss is typically 13dB. The user can use a differential IF amplifier on the mixer IF ports, but a DC block is required on both IFD+/IFD- and IFM+/ IFM- ports to keep external DC from entering the IF ports of the mixer.
High-Linearity Mixer
RF Port and Balun
Differential IF
LO Inputs, Buffer, and Balun
Applications Information
The RF and LO inputs are internally matched to 50I when operating over 1200MHz to 1700MHz and 1450MHz to 2050MHz frequency ranges, respectively. No matching components are required for operation within these bands. The RF port input return loss is typically better than 15dB over the 1200MHz to 1700MHz RF frequency range and return loss at the LO ports is typically better than 15dB over the entire LO range. RF and LO inputs require only DC-blocking capacitors for interfacing. If operating the device over the Extended RF Band of 1700MHz to 2000MHz, simply change the DC-blocking capacitors to 1.8pF and add a shunt 4.7nH inductor to each RF port. See Table 1 for details. When matched with this alternative set of elements, the RF port input return loss is typically better than 14dB over the 1700MHz to 2000MHz band. The IF output impedance is 200I (differential). For evaluation, an external low-loss 4:1 (impedance ratio) balun transforms this impedance to a 50I single-ended output (see the Typical Application Circuit).
Input and Output Matching
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz Downconversion Mixer with LO Buffer/Switch
Each channel of the device has two pins (LO_ADJ_, IF_SET) that allow external resistors to set the internal bias currents. Nominal values for these resistors are given in Table 1. Larger value resistors can be used to reduce power dissipation at the expense of some performance loss. If 1% resistors are not readily available, substitute with 5% resistors. Significant reductions in power consumption can also be realized by operating the mixer with an optional 3.3V supply voltage. Doing so reduces the overall power consumption by approximately 47%. See the 3.3V Supply AC Electrical Characteristics table and the relevant 3.3V curves in the Typical Operating Characteristics section. For applications requiring optimum RF-to-IF and LO-toIF isolation, connect low-ESR inductors from IND_EXT_ (pins 15 and 31) to ground. When improved isolation is not required, connect IND_EXT_ to ground using 0I resistance.
Reduced-Power Mode
ground does not exceed several picofarads. For the best performance, route the ground pin traces directly to the exposed pad under the package. The PCB exposed pad MUST be connected to the ground plane of the PCB. Use multiple vias to connect this pad to the lower-level ground planes. This method provides a good RF/thermal-conduction path for the device. Solder the exposed pad on the bottom of the device package to the PCB. The MAX19994A evaluation kit can be used as a reference for board layout. Gerber files are available upon request at www.maxim-ic.com. Proper voltage-supply bypassing is essential for highfrequency circuit stability. Bypass each VCC pin and TAPMAIN/TAPDIV with the capacitors shown in the Typical Application Circuit (see Table 1 for component values). Place the TAPMAIN/TAPDIV bypass capacitors to ground within 100 mils of the pin. The exposed pad (EP) of the MAX19994A's 36-pin thin QFN-EP package provides a low thermal-resistance path to the die. It is important that the PCB on which the device is mounted be designed to conduct heat from the EP. In addition, provide the EP with a low-inductance path to electrical ground. The EP MUST be soldered to a ground plane on the PCB, either directly or through an array of plated via holes.
MAX19994A
Power-Supply Bypassing
IND_EXT_ Inductors
Exposed Pad RF/Thermal Considerations
A properly designed PCB is an essential part of any RF/microwave circuit. Keep RF signal lines as short as possible to reduce losses, radiation, and inductance. The load impedance presented to the mixer must be such that any capacitance from both IF- and IF+ to
Layout Considerations
Table 1. Component Values
DESIGNATION C1, C8 C2, C7, C14, C16 C3, C6 C4, C5 C9, C13, C15, C17, C18 C10, C11, C12, C19, C20, C21 L1, L2, L4, L5 QTY 2 4 2 2 5 6 4 DESCRIPTION 39pF microwave capacitors (0402) 1.8pF for Extended RF Band applications (fRF = 1.7GHz to 2GHz) 39pF microwave capacitors (0402) 0.033FF microwave capacitors (0603) Not used 0.01FF microwave capacitors (0402) 150pF microwave capacitors (0603) 120nH wire-wound, high-Q inductors (0805) 10nH wire-wound, high-Q inductors (0603). Smaller values or a 0I resistor can be used at the expense of some LO leakage at the IF port and RF-to-IF isolation performance loss. 4.7nH inductor (0603). Installed for Extended RF Band applications only (1.7GHz to 2GHz). COMPONENT SUPPLIER Murata Electronics North America, Inc. Murata Electronics North America, Inc. Murata Electronics North America, Inc. -- Murata Electronics North America, Inc. Murata Electronics North America, Inc. Coilcraft, Inc.
L3, L6
2
Coilcraft, Inc.
L7, L8
2
TOKO America, Inc.
25
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz Downconversion Mixer with LO Buffer/Switch
MAX19994A
Table 1. Component Values (continued)
DESIGNATION QTY DESCRIPTION 681I 1% resistors (0402). Used for VCC = 5.0V applications. Larger values can be used to reduce power at the expense of some performance loss. 681I 1% resistors (0402). Used for VCC = 3.3V applications. 1.82kI 1% resistors (0402). Used for VCC = 5.0V applications. Larger values can be used to reduce power at the expense of some performance loss. 1.43kI 1% resistors (0402). Used for VCC = 3.3V applications. R3, R6 T1, T2 U1 2 2 1 0I resistors (1206) 4:1 transformers (200:50) TC4-1W-17 MAX19994A IC (36 TQFN-EP) Digi-Key Corp. Mini-Circuits Maxim Integrated Products, Inc. COMPONENT SUPPLIER
R1, R4
2
Digi-Key Corp.
R2, R5
2
Digi-Key Corp.
Typical Application Circuit
VCC LO2 LO SELECT C15 LO1
IF MAIN OUTPUT
LOSEL
C16 GND GND GND LO2
C14 GND GND VCC LO1
IF DIV OUTPUT
4:1
T1 N.C.
27
26
25
24
23
22
21
20
19
T2
4:1
28 29 30 31
EXPOSED PAD
18 N.C. 17 16 15 14 13 12 11 10
IFDIFD+ GND IFD_SET VCC C9 VCC R4 LO_ADJ_D VCC IND_EXTD L6 VCC C13 VCC R5 C11 C12 C10
C19
C21
C20 R2
LO_ADJ_M VCC C17 VCC IND_EXTM L3 IFMIFM+ GND IFM_SET VCC R1 C18 VCC
L1 R3 VCC
L2
MAX19994A
L5 R6
L4
32 33 34 35 36
+
1
2
3
4
5
6
VCC
7
GND
8
TAPDIV C7
9
RFDIV C8 L8
RFMAIN
TAPMAIN
GND
VCC
C2
C1 L7
C3
C4 VCC
GND
C5 VCC
C6 RF DIV INPUT
RF MAIN INPUT
26
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz Downconversion Mixer with LO Buffer/Switch
Chip Information
PROCESS: SiGe BiCMOS
Package Information
For the latest package outline information and land patterns, go to www.maxim-ic.com/packages. Note that a "+", "#", or "-" in the package code indicates RoHS status only. Package drawings may show a different suffix character, but the drawing pertains to the package regardless of RoHS status. PACKAGE TYPE 36 Thin QFN-EP PACKAGE CODE T3666+2 DOCUMENT NO. 21-0141
MAX19994A
27
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz Downconversion Mixer with LO Buffer/Switch
MAX19994A
Revision History
REVISION NUMBER 0 REVISION DATE 4/10 Initial release DESCRIPTION PAGES CHANGED --
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
28
(c)
Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 2010 Maxim Integrated Products Maxim is a registered trademark of Maxim Integrated Products, Inc.

▲Up To Search▲

Price & Availability of MAX19994AETX

	To Download MAX19994AETX Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .